| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.1W/100mW |
| Description & Applications | Features •Transistor Silicon PNP Epitaxial Type (PCT Process) •High-density mount is possible because of devices housed in very thin TESM packages. •Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Wide range of resistor values are available to use in various circuit designs. •Complementary to RN1112FT, RN1113FT Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •晶体管的硅PNP外延式（PCT程序） •高密度安装是可能因为设备安置非常薄TESM包。 •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 •电阻值范围广，可在各种电路中使用设计。 •互补到RN1112FT RN1113FT的 应用 •开关，逆变电路，接口电路和驱动器电路应用 |