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Parameters:

  • Model:RN2315
  • Manufacturer:HUABAN
  • Date Code:0543+ 07+5.5KROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:YS
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.22
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1314to1318 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •PNP晶体管的硅外延型(PCT工艺) •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补RN1314to1318的 应用 •开关,逆变电路,接口电路和驱动器电路应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RN2315
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