| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -800mA/0.8A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2.2KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 65 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features •Transistor Silicon PNP Epitaxial Type (PCT Process) •High current type (IC(MAX) = −800mA) •With built-in bias resistors •Simplify circuit design •Reduce a quantity of parts and manufacturing process •Low VCE (sat) •Complementary to RN1421~RN1427 Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •PNP晶体管的硅外延型（PCT工艺） •高电流型（IC（MAX）=-800MA） •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •低VCE（SAT） •互补RN1421~~ RN1427 应用 •开关，逆变电路，接口电路和驱动器电路应用 |