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Parameters:

  • Model:RN2964FE
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:YYD
  • Package:SOT563

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA/-0.1A
 Input Resistance(R1)  47KΩ
Base-Emitter Resistance(R2)   47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE)  80
Transtion Frequency(fT)  200MHZ
Power Dissipation (Pd)  0.1W
Description & Applications  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) 
 
Switching, Inverter Circuit, Interface Circuit and 
Driver Circuit Applications 
 
• Two devices are incorporated into an Extreme-Super-Mini (6-pin) 
package. 
• Incorporating a bias resistor into a transistor reduces parts count. 
Reducing the parts count enables the manufacture of ever more 
compact equipment and lowers assembly cost.
Technical Documentation Download Read Online

 

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RN2964FE
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