| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-12V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-500mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.22 |
| 直流电流增益hFE DC Current Gain(hFE) | 80/140 |
| 截止频率fT Transtion Frequency(fT) | 250MHz/200MHz |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package • Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Diverse resistance values are available suited to a range of different circuit designs. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •东芝晶体管硅NPN外延型（PCT工艺）硅PNP外延式（PCT程序） •两个设备都纳入一个超超级迷你（6针）封装 •将偏置电阻晶体管，减少了器件数量。减少部件数量，使能制造的更加紧凑的设备，并降低装配成本。 •多样化的电阻值是适合的范围内，不同的电路设计。 应用 •开关，逆变电路，接口电路和驱动器电路应用 |