| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 基极输入电阻R1 Input Resistance(R1) | 2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~320 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.5W/500mW |
| Description & Applications | Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Small flat package • PC = 1~2W (mounted on ceramic substrate) • Complementary to RN5001 |
| 描述与应用 | 特点 •PNP晶体管的硅外延型（PCT工艺） •电机驱动电路应用功率放大器应用电源开关应用•借助内置的偏置电阻？ •简化电路设计 •减少了部件数量和制造工艺 •小扁平封装 •PC= 1〜2W（安装在陶瓷基板上） •互补RN5001 |