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Parameters:

  • Model:RN6001
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:YA
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-30V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-30V
集电极连续输出电流IC Collector Current(IC)-2A
基极输入电阻R1 Input Resistance(R1)2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)100~320
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.5W/500mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Small flat package • PC = 1~2W (mounted on ceramic substrate) • Complementary to RN5001
描述与应用特点 •PNP晶体管的硅外延型(PCT工艺) •电机驱动电路应用功率放大器应用电源开关应用•借助内置的偏置电阻? •简化电路设计 •减少了部件数量和制造工艺 •小扁平封装 •PC= 1〜2W(安装在陶瓷基板上) •互补RN5001

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RN6001
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