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Parameters:

  • Model:RSQ035N03FS
  • Manufacturer:HUABAN
  • Date Code:06+NOPB 06+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:QN
  • Package:SOT-163/TSMT6/SOT23-6

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance94mΩ@ VGS =4V, ID =3.5A
开启电压Vgs(th) Gate-Source Threshold Voltage1~2.5V
耗散功率Pd Power Dissipation1.25W
Description & Applications4V Drive Nch MOS FET Features 1) Low On-resistance. 2) Space saving, small surface mount package . Applications Switching
描述与应用4V驱动N沟道MOS FET 特点 1)低导通电阻。 2)节省空间,小的表面贴装封装。 应用 开关

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RSQ035N03FS
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