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Parameters:

  • Model:RT1P237M
  • Manufacturer:HUABAN
  • Date Code:05+ 05+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:PD
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures •Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type •Built-in bias resistor (R1=2.2kΩ,R2=47kΩ) APPLICATION •Inverted circuit,switching circuit,interface circuit, driver circuit
描述与应用特点 •开关应用硅PNP外延型晶体管,电阻 •内置偏置电阻(R1=2.2KΩ,R2=47KΩ) 应用 •倒电路,开关电路,接口电路,驱动电路

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RT1P237M
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