集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 0.047 |
直流电流增益hFE DC Current Gain(hFE) | 80 |
截止频率fT Transtion Frequency(fT) | 150MHz |
耗散功率Pc Power Dissipation | 0.15W/150mW |
Description & Applications | Features •Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type •Built-in bias resistor (R1=2.2kΩ,R2=47kΩ) APPLICATION •Inverted circuit,switching circuit,interface circuit, driver circuit |
描述与应用 | 特点 •开关应用硅PNP外延型晶体管,电阻 •内置偏置电阻(R1=2.2KΩ,R2=47KΩ) 应用 •倒电路,开关电路,接口电路,驱动电路 |