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Parameters:

  • Model:RT3WLMM
  • Manufacturer:HUABAN
  • Date Code:10+ROHS 10+16KROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:WLM
  • Package:SOT-363/SC-88

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)6V/-6V
集电极连续输出电流IC Collector Current(IC)200mA/-200mA
截止频率fT Transtion Frequency(fT)200MHz
直流电流增益hFE DC Current Gain(hFE)150~500
管压降VCE(sat) Collector-Emitter Saturation Voltage300mV/-300mV
耗散功率Pc Power Dissipation150mW
Description & ApplicationsFeatures •Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type •Each transistor elements are independent. •Mini package for easy mounting APPLICATION •For low frequency amplify application
描述与应用特点 •复合晶体管低频放大应用硅外延型 •每个晶体管的元素是独立的。 •易于安装的小型封装 应用 •对于低频放大应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RT3WLMM
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