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  • Model:RTR025N03
  • Manufacturer:HUABAN
  • Date Code:06NOPB 05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:QZ
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current2.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.092Ω/Ohm @2.5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.5V
耗散功率Pd Power Dissipation1W
Description & Applications2.5V Drive Nch MOS FET Silicon N-channel MOS FET Low On-resistance. Space saving−small surface mount package (TUMT3). Low voltage drive (2.5V drive).
描述与应用2.5V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 节省空间的小型表面贴装封装(TUMT3)。 低电压驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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RTR025N03
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