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  • Model:S-24CS16AOI-H6T1
  • Manufacturer:HUABAN
  • Date Code:05+NOPB700
  • Standard Package:
  • Min Order:10
  • Mark/silk print/code/type:D13
  • Package:WLP-6A

存储器格式
Format - Memory
EEPROMs - 串行 EEPROMs - Serial
存储器类型
Memory Type
EEPROM
存储容量
Memory Size
2K (128 x 16)
速度
Speed
100kHz,400kHz
接口
Interface
I²C,2 线串口 I²C, 2-Wire Serial
电源电压
Voltage - Supply
2.7 V ~ 5.5 V
Description & Applications2-WIRE CMOS SERIAL E2PROM Features • Low power consumption Standby: 5.0 µA Max. (VCC = 5.5 V) Read: 0.8 mA Max. (VCC = 5.5 V) • Operating voltage range Read: 1.8 to 5.5 V Write: 2.7 to 5.5 V • Page write: 16 bytes / page • Sequential read • Operating frequency: 400 kHz (VCC = 5 V ±10 %) • Write disable function when power supply voltage is low • Endurance: 106 cycles / word *1 (at +25 °C) write capable, 105 cycles / word *1(at +85 °C) *1. For each address (Word: 8 bits) • Data retention: 10 years (after rewriting 105 cycles / word at +85 °C) • Write protection: 100% • Lead-free products
描述与应用MOS 2线串行E2PROM •低功耗待机模式:5.0μA最大。 (VCC = 5.5 V) 阅读:0.8 mA最大。 (VCC = 5.5 V) •工作电压范围读出:1.8至5.5 V 写:2.7至5.5 V •页写入16字节/页 •顺序读出 •工作频率:400千赫(VCC = 5 V±10%) •写禁用功能,当电源电压低 •耐久性:106次/字 *1(+25°C)写能力, 105次/字 * 1(在+85°C) * 1。对于每一个地址(字:8位) •数据保存期:10年(后改写105 次/字,在+85°C) •写保护:100% •无铅产品

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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S-24CS16AOI-H6T1
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