集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -300V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流IC
Collector Current(IC) | −500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) | 50MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage • Complementary pair with SBT42 |
| 描述与应用 | PNP硅晶体管 简述 •高电压施加 •电话应用 特点 •集电极 - 发射极电压 •互补配对SBT42 |