最大源漏极电压Vds
Drain-Source Voltage | 12V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -5V |
漏极电流(Vgs=0V)IDSS
Drain Current | 10mA-35mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -2.5V |
耗散功率Pd
Power Dissipation | 150mW/0.15W |
| Description & Applications | GaAs N-channel Dual Gate MES FET Description The SGM2016AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. UHF-band high-frequency amplifier, mixer, and oscillator Ultra-small package Low voltage operation Low noise High gain High stability Built-in gate protection diode |
| 描述与应用 | 砷化镓N沟道双栅MES FET 描述 在该SGM2016AM是一个N沟道双栅砷化镓 MES 场效应管为UHF频段的低噪声放大。这FET是一个适用于广泛的应用，包括电视调谐器，移动设备和DBS中频放大器。 超高频波段高频放大器，混频器和振荡器 超小型封装 低电压操作 低噪音 高增益 高稳定性 内置栅极保护二极管 |