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  • Model:SI2301DS
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:R1
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.105Ω @-2.8A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
1.25W
Description & ApplicationsP-Channel 1.25-W, 2.5-V MOSFET
描述与应用P沟道1.25-W,2.5-V MOSFET

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SI2301DS
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