集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | −200mA/-0.2A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT3904 |
| 描述与应用 | PNP硅开关晶体管 •高直流电流增益：0.1 mA至100 mA的 •低集电极 - 发射极饱和电压 •互补类型：SMBT3904 |