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Parameters:

  • Model:SP0610TE-6327
  • Manufacturer:HUABAN
  • Date Code:04+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:SSF
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
-100V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-1.7A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.16Ω @1.7A,10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
2.1-4V
耗散功率Pd
Power Dissipation
1.8W
Description & ApplicationsSIPMOS SMALL-SIGNAL TRANSISTOR N CHANNEL ENHANCEMENT MODE AVALANCHE RATED VGH(th)=2.1-4.0V
描述与应用SIPMOS小信号晶体管 N沟道 增强模式 额定雪崩 VGH(th)=2.1-4.0V

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SP0610TE-6327
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