集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 180MHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~700 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN Silicon Transistor •Low collector saturation voltage VCE(sat)= Max. 0.4V •Low output capacitance Cob= Typ. 2pF •Complementary to the SSA1037 Descriptions •General small signal amplifier |
| 描述与应用 | 特点 •NPN硅晶体管 •低集电极饱和电压 VCE（sat）=最大。 0.4V •低输出电容 COB=典型2PF •互补的SSA1037 简述 •一般的小信号放大器 |