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Parameters:

  • Model:SSM3K05FU
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:DF
  • Package:SOT-323/USM/SC-70

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance4Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.7-1.3V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 模拟开关应用 •2.5 V门极驱动 •高输入阻抗 •低栅极阈值电压VTH =0.7〜1.3 V •小型封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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SSM3K05FU
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