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  • Model:ST194
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:MR
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage13V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage8-14V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsSilicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
描述与应用硅N_Channel MOSFET四极管 •短沟道晶体管 与高S/ C质量的因素 •对于低噪声,增益控制 输入级到1 GHz •无铅(符合RoHS)包1) •符合AEC Q101

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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ST194
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