集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −32V |
集电极连续输出电流IC
Collector Current(IC) | -2A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 160~320 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −800mV/-0.8V |
耗散功率Pc
PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W • Low collector saturation voltage • Complementary pair with STD1766 |
| 描述与应用 | PNP硅晶体管 描述 •中等功率放大器 特点 •PC（集电极耗散）= 2W •低集电极饱和电压 •互补配对STD1766 |