集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 260MHz |
直流电流增益hFE
DC Current Gain(hFE) | 150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 350mW/0.35W |
| Description & Applications | Features • NPN Silicon Transistor • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) |
| 描述与应用 | 特点 •NPN硅晶体管 •低饱和中等电流应用 •极低的集电极饱和电压 •适用于低电压大电流驱动器 •高直流电流增益和大电流容量 •低导通电阻RON=0.6Ω（最大）（IB=1MA） |