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Parameters:

  • Model:STD123SF
  • Manufacturer:HUABAN
  • Date Code:04+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:123
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
260MHz
直流电流增益hFE
DC Current Gain(hFE)
150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
350mW/0.35W
Description & ApplicationsFeatures • NPN Silicon Transistor • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
描述与应用特点 •NPN硅晶体管 •低饱和中等电流应用 •极低的集电极饱和电压 •适用于低电压大电流驱动器 •高直流电流增益和大电流容量 •低导通电阻RON=0.6Ω(最大)(IB=1MA)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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STD123SF
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