集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~400 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -900mV/-0.9V |
耗散功率Pc
PoWer Dissipation | 1.6W |
| Description & Applications | Medium Current, High Performance, Low Voltage PNP Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 3A continuous collector current 40V breakdown voltage SOT-223 plastic package for surface mounting Available in tape & reel packing In compliance with the 2002/93/EC European Directive Description The device in manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Applications Power management in portable equipment Voltage regulation in bias supply circuits Switching regulator in battery charger applications Heavy load driver |
| 描述与应用 | 中等电流，高性能，低电压PNP晶体管 一般特征 非常低集电极到发射极饱和电压 特区电流增益，HFE> 100 3A连续集电极电流 40V击穿电压 SOT-223表面贴装塑料包装 可在磁带和卷轴包装 符合欧洲2002/93/EC指令 描述 通过使用一个“基地之岛”的布局，在低电压PNP平面技术制造的设备。由此产生的晶体管显示异常高增益性能加上极低的饱和电压。 应用 在便携式设备的电源管理 电压调节偏置电源电路 在电池充电器应用的开关稳压器 重型负载驱动器 |