| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/-150mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/-300mV |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features • Epitaxial planar NPN/PNP silicon transistor • Small package save PCB area • Reduce quantity of parts and mounting cost • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package |
| 描述与应用 | 特点 •外延平面NPN/ PNP硅晶体管 •小包装节省PCB面积 •减少部件数量和安装成本 •双方2SA1980芯片和SOT-363封装的2SC5343芯片 |