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Parameters:

  • Model:TN5325K1-G
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:N3
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage250V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.6-2.0V
耗散功率Pd Power Dissipation360mW/0.36W
Description & ApplicationsLow threshold — 2.0V max. High input impedance Low input capacitance — 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
描述与应用低门槛 - 2.0V最大。 高输入阻抗 低输入电容 - 125pF最大。 快速开关速度 低导通电阻 无二次击穿低输入和输出泄漏 互补N和P沟道器件

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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TN5325K1-G
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