集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -220V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -200V |
集电极连续输出电流IC
Collector Current(IC) | -2A |
截止频率fT
Transtion Frequency(fT) | 110MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -370mV/-0.37V |
耗散功率Pc
PoWer Dissipation | 3W |
| Description & Applications | SOT223 PNP SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps COMPLEMENTARY TYPES FZT956 |
| 描述与应用 | SOT223 PNP硅平面高电流（高性能）晶体管 * 4安培的连续电流（10安培的峰值电流） *极低的饱和电压 *出色的增益特性到3安培 互补类型FZT956 |