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Parameters:

  • Model:UM6K1
  • Manufacturer:HUABAN
  • Date Code:05+ 04+ROHS600
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:K1
  • Package:SOT-363/SC70-6/UMT6

最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
8Ω@ VGS = 4V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.8~1.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsSmall switching (30V, 0.1A) Features: 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. Applications: Interfacing, switching (30V, 100mA) Structure: Silicon N-channel MOSFET
描述与应用小开关(30V,0.1A) 特点: 1)两个2SK3018晶体管UMT在一个单一的封装中。 2)安装成本和面积可减少一半。 3)低导通电阻。 4)低电压驱动(2.5V)使该器件理想用于    便携式设备。 5)轻松设计的驱动电路。 应用范围: 接口,开关(30V,100mA的) 结构: 硅N沟道 MOSFET

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UM6K1
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