| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
100~600 |
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •General purpose(dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package. |
| 描述与应用 |
特点 •通用（双数字晶体管） •两个DTC114T的在EMT或UMT或SMT封装的芯片 |