| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 320MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 270~680 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 90mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 150mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • General purpose transistors(dual transistors) • Two 2SC5585 chips in a EMT or UMT package. • Mounting possible with EMT3 or UMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •通用晶体管（双晶体管） •两个2SC5585一个EMT或UMT包的芯片。 •安装EMT3或UMT3自动的安装机器可能。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |