| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
15V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
12V/-12V |
| 集电极连续输出电流IC Collector Current(IC) |
500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) |
320MHz/260MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
270~680/270~680 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
90mV/-100mV |
| 耗散功率Pc Power Dissipation |
150mW |
| Description & Applications |
Features • General purpose transistor (dual transistors) • Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. • Mounting possible with EMT3 or UMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Low VCE(sat) |
| 描述与应用 |
特点 •通用晶体管（双晶体管） •一个2SA2018芯片和2SC5585一个EMT或UMT包的芯片。 •安装EMT3或UMT3自动的安装机器可能。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半。 •低VCE（SAT） |