| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 100KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Silicon NPN epitaxial planar type For digital circuits ■ Features • Base-emitter resistance RBE: 100 kΩ, • Mini type package, allowing downsizing of the equipment. • Allowing automatic insertion through tape packing. |
| 描述与应用 | NPN硅外延平面型 用于数字电路 ■特性 •基射极电阻RBE：100kΩ的， •迷你型包装，让精 简的设备。 •允许通过自动插入磁带包装 |