| MOSFET TYPE |
P-CHANNEL MOS FET |
| MOS Drain-Source Voltage (Vds) |
-20V |
|
Vgs(±)
MOS Gate-Source Voltage
|
±8V |
| MOS Drain Current （Id） |
-2.0A |
|
Rds(on)
MOS Drain-Source On-State Resistance
|
RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)
|
|
Vgs(th)
MOS Gate-Source Threshold Voltage
|
|
| DIODES TYPE |
SCHOTTKY BARRIER DIODE
|
| DIODE Reverse Voltage (Vr) |
30V |
| DIODE Average Rectified Current (Io) |
1A |
| DIODE Forward Voltage(Vf) |
0.38V |
| Power Dissipation (Pd) |
|
| Description & Applications |
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
• Low forward voltage (Schottky barrier diode)
|
| Technical Documentation Download |
Read Online |