最大源漏极电压Vds
Drain-Source Voltage | 16V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 7V |
最大漏极电流Id
Drain Current | 100mA/0.1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 12Ω@ VGS = 4V, ID = 10mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.5~1.1V |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The μ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES • Two MOS FET circuits in package the same size as SC-70 • Automatic mounting supported • Gate can be driven by a 1.5 V power source • Because of its high input impedance, there’s no need to consider a drive current • Since bias resistance can be omitted, the number of components required can be reduced |
| 描述与应用 | N沟道MOS场效应晶体管 用于高速开关 说明 μPA675T是一个N沟道垂直MOS FET。因为它 可以由低至1.5 V的电压，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特点 •两个MOS FET的软件包电路SC-70相同的尺寸 •支持自动安装 •门可以由一个1.5 V电源 •由于其高输入阻抗，有没有必要考虑驱动电流 自偏压电阻可以省略，数量组件可以减少所需要 |