| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5.5V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 6500MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 120 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 210mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NEC's NPN SILICON RF TWIN TRANSISTOR • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE:1.2 mm x 0.8 mm • LOW HEIGHT PROFILE:Just 0.50 mm high • TWO LOW NOISE OSCILLATOR TRANSISTORS:NE851 • IDEAL FOR 1-3 GHz OSCILLATORS |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NEC的双晶体管NPN硅RF •低电压，低电流操作 •小型封装：1.2毫米x0.8毫米 •外形高度低：仅0.50毫米高 •两个低噪声振荡器晶体管：NE851 •适用于1-3 GHz的振荡器 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |