最大源漏极电压Vds
Drain-Source Voltage | 20V/-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 10V/10V |
最大漏极电流Id
Drain Current | 3A/-1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 58mΩ@ VGS = 4V, ID = 2000mA/ 500mΩ@ VGS = -4V, ID = -500mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.5~1.3V/-0.4~-1.4V |
耗散功率Pd
Power Dissipation | 900mW/0.9W |
| Description & Applications | P-Channel and N-Channel Silicon MOSFET Features • Best suited for DC/DC converters. • The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 2.5V drive. • Mounting height 0.75mm. |
| 描述与应用 | P沟道和N沟道硅MOSFET 特点 •最适合DC/ DC转换器。 •VEC2605采用了P沟道MOSFET和一个N沟道MOSFET，具有低导通电阻 超高速交换，从而实现高密度安装。 •2.5V驱动。 •安装高度0.75毫米。 |