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Parameters:

  • Model:VSS849TR
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:49R
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage16V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage8-12V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsFeatures Integrated gate protection diodes Low noise figure High gain Biasing network on chip Improved cross modulation at gain reduction High AGC-range SMD package
描述与应用综合栅极保护二极管 低噪声系数 高增益 偏置片上网络 改进的交叉调制增益降低 高AGC范围 SMD封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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VSS849TR
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