XN1213 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 80 300mW/0.3W SOT-153/SC-74A/SOT23-5 marking 9L switching inverting interface driver circuit|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

XN1213 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 80 300mW/0.3W SOT-153/SC-74A/SOT23-5 marking 9L switching inverting interface driver circuit

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Model：XN1213
Manufacturer：HUABAN
Date Code：05+04+3KROHS 05+ROHS
Standard Package：3000
Min Order：10
Mark/silk print/code/type：9L
Package：SOT-153/SC-74A/SOT23-5

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	50V
集电极连续输出电流IC Collector Current(IC)	100mA
Input Resistance(R1)	47KΩ/Ohm
Base-Emitter Resistance(R2)	47KΩ/Ohm
(R1/R2) Resistance Ratio	1
直流电流增益hFE DC Current Gain(hFE)	80
截止频率fT Transtion Frequency(fT)	150MHz
耗散功率Pc Power Dissipation	300mW/0.3W
Description & Applications	Silicon NPN epitaxial planer transistor For switching/digital circuits UN1213 × 2 elements

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SMAJ5.0A-E3/61 TVS/ESD 5V 43.5A DO-214AC/SMA-5V marking AE	SMAJ5.0A-E3/61 Mark：AE Package：DO-214AC/SMA-5V	HUABAN	Lot number：05+ROHS	1700 10Minimum
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Integrated Circuit（IC） RF switch UPG2010TB SOT-363 marking G2Y	UPG2010TB Mark：G2Y Package：SOT-363/SC70-6	HUABAN	Lot number：05+1RNOPB 05+	0 10Minimum
RD6.2SL Zener Diodes 200mW/0.2W SOD323/0805-6.2V marking N3 623 low noise/Sharp Breakdown characteristic/constant voltage/constant current/surge absorber	RD6.2S Mark：B3 623 Package：SOD323/0805-6.2V	HUABAN	Lot number：1r nopb	0 10Minimum
2SK3230B JFET N-Channel 20v 0.32~0.43mA SOT-523 marking CJ radio and telephone	2SK3230B Mark：CJ Package：SOT-523/SC-75/USM	HUABAN	Lot number：05+NOPB	1400 10Minimum

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