| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/100mA |
| 截止频率fT Transtion Frequency(fT) | 80MHz/150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -300mA/100mA |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) • Two elements incorporated into one package.(Tr1 base is connected to Tr2 emitter.) • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification |
| 描述与应用 | 特点 •硅外延刨床PNP晶体管（TR1）硅NPN外延刨床晶体管的（TR2） •两个要素纳入一包装（TR1基地TR2发射器连接到）。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大 |