| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
25V/-15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V/-10V |
| 集电极连续输出电流IC Collector Current(IC) |
500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) |
200MHz/130MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~800/100~350 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
130mV/-160mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For amplification of low-frequency output 2SD1328 + 2SB0970 |
| 描述与应用 |
特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •低频输出的放大 2SD1328 + 2SB0970 |