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  • Model：XP151A12A2MR
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：112
  • Package：SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.1Ω/Ohm @500mA,4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage0.7-1.4V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsFEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package
描述与应用FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package

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XP151A12A2MR
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