| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) |
150MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
160~460/160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/-300mV |
| 耗散功率Pc Power Dissipation |
150mW |
| Description & Applications |
Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification 2SD0601A(2SD601A) + 2SB0709A(2SB709A) |
| 描述与应用 |
特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大
2SD0601A(2SD601A) + 2SB0709A(2SB709A)
|