| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 17.5V |
| 集电极连续输出电流IC Collector Current(IC) | 5A |
| Q1基极输入电阻R1 Input Resistance(R1) | 150MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 450 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 120mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 2750mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •SM-8双NPN中等功率高增益晶体管 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |