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Parameters:

  • Model:ZXM64N035GTA
  • Manufacturer:HUABAN
  • Date Code:02+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:
  • Package:SOT-223/SC-73/TO261-4

最大源漏极电压Vds Drain-Source Voltage35V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current6.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation2W
Description & Applications35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 pa
描述与应用35V N-沟道增强型MOSFET 摘要 V(BR)DSS =35V RDS(ON)= 0.050:ID=6.7A 说明 这种新一代的高密度平面MOSFET由Zetex采用了独特​​的 结构,结合低的导通电阻的开关速度快的好处。这使得他们的高效率,低电压,电源管理应用的理想选择。 •低导通电阻 •开关速度快 •低门槛 •低栅极驱动器 •SOT23封装

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