最大源漏极电压Vds
Drain-Source Voltage | 30V/-12V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 10V/10V |
最大漏极电流Id
Drain Current | 350mA/-1.5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 12.8Ω@ VGS =1.5V, ID =10mA/1250mΩ@ VGS =-1.5V, ID =-50mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.4~1.3V/-0.3~-1V |
耗散功率Pd
Power Dissipation | 600mW/0.6W |
| Description & Applications | General-Purpose Switching Device Applications Features • The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting. • Low ON-resistance. • 2.5V drive (N-ch), 1.8V drive (P-ch) |
| 描述与应用 | 通用开关设备应用 特点 •SCH2602采用了N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻和高速开关，从而实现高密度安装。 •低导通电阻。 •2.5V驱动器（N-CH），1.8V驱动器（P-CH） |