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Parameters:

  • Model:2SK2491
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:K2491
  • Package:TO-263

最大源漏极电压Vds Drain-Source Voltage180V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.08Ω/Ohm @10A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2-4V
耗散功率Pd Power Dissipation70W
Description & ApplicationsSmall switching (60V, 2A) Silicon N-channel MOSFET Features N-Channel Enhancement type Input capacitance(Ciss) is small. Especially,input capacitance at 0 biass is small. The static Rds(on) is small The switching time is fast
描述与应用小开关(60V,2A) 硅N沟道MOSFET 特性 N沟道增强型 输入电容(CISS)是很小的。 特别,输入电容在0 预偏电阻很小。 静态的Rds(on)很小 开关时间快

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2491
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