集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −15V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 500~1500 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES * Low equivalent on-resistance; APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT688B |
| 描述与应用 | SOT223 PNP硅平面中功率高增益晶体管 特点 *低等效导通电阻; 应用 *电池供电电路 互补型FZT688B |