| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 80MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 120~400 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 100mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 200mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features •EPITAXIAL PLANAR NPN TRANSISTOR •A super-minimold package houses 2 transistor. •Excellent temperature response between these 2 transistor. •High pairing property in hFE. •The follwing characteristics are common for Q1, Q2 •GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •外延平面PNP晶体管 •超小型模具包设有2个晶体管。 •优秀的温度响应之间这2个晶体管。 •高配对财产HFE。 •在以下的特性是共同为Q1，Q2 •通用应用。开关中的应用。 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |