Please log in first
Home
Cart0

×

Parameters:

  • Model:KRX210E
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:MN
  • Package:SOT-563/TES6

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)1KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.1
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation200mW/0.2W
Description & ApplicationsFeatures •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TES6. •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process.
描述与应用特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用 •在TES6包括两个设备 •内置偏置电阻器 •简化电路设计 •减少了部件数量和制造工艺

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
KRX210E
*Title:
Message:
*Code: