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Parameters:

  • Model:SI1022R
  • Manufacturer:HUABAN
  • Date Code:05+5rnopb(打标) 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:egc
  • Package:SOT-523/SC-75A

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current330mA/0.33A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.25Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-Channel 1.8 V (G-S) MOSFET FEATURES •Halogen-free According to IEC 61249-2-21 Definition •TrenchFET Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000V • High-Side Switching • Low On-Resistance: 0.7  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Compliant to RoHS Directive 2002/95/EC
描述与应用 N沟道1.8 V(G-S)的MOSFET 功率MOSFET:1.8 V额定 •门源ESD保护:2000 V •高边开关 •低导通电阻:0.7 •低阈值:0.8 V(典型值) •开关速度快:10 ns的 •符合RoHS指令2002/95/EC

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SI1022R
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