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Parameters:

  • Model:HM3669
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:H3669
  • Package:SOT-89

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsNPN EPITAXIAL PLANAR TRANSISTOR The HM3669 is designed for using in power amplifier applications, power switching application.
描述与应用NPN外延平面晶体管 HM3669是专为使用功率放大器应用, 电源开关应用。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HM3669
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