集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC
Collector Current(IC) | 2A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR The HM3669 is designed for using in power amplifier applications, power switching application. |
| 描述与应用 | NPN外延平面晶体管 HM3669是专为使用功率放大器应用， 电源开关应用。 |