集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 1500 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN epitaxial planer Silicon transistor General-Purpose Amp Applications Very Small-sized package peimitting the 2SC4413-applied sets to be made samll and slim Adoption of FBET process high DC corrent gain Low collector to emitter saturation voltage |
| 描述与应用 | NPN外延刨床硅的晶体管 通用放大器应用 非常小的封装允许2SC4413的应用设置制得微小和轻薄 采纳FBET过程 直流电流量增益高 集电极到发射极饱和电压低 |